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HL8325G - GaAlAs Laser Diode

Description

The HL8325G is a high-power 0.8 µm band GaAlAs laser diode with a TQW (triple quantum well) structure.

Its internal circuit configuration is suited for operation on a single positive supply voltage.

Features

  • Infrared light output: λp = 820 to 840 nm High power: standard continuous operation at 40 mW (CW), pulsed operation at 50 mW Built-in monitor photodiode Single longitudinal mode 190 HL8325G Absolute Maximum Ratings (TC = 25°C) Item Optical output power Pulse optical output power LD reverse voltage PD reverse voltage Operating temperature Storage temperature Note: Symbol PO PO (pulse) VR (LD) VR (PD) Topr Tstg Rated Value 40 50.
  • 2 30.
  • 10 to +6.

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HL8325G GaAlAs Laser Diode Description The HL8325G is a high-power 0.8 µm band GaAlAs laser diode with a TQW (triple quantum well) structure. Its internal circuit configuration is suited for operation on a single positive supply voltage. It is suitable as a light source for optical disk memories, card readers and various other types of optical equipment.
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