Datasheet4U Logo Datasheet4U.com

4AK25 - Silicon N-Channel Power MOS FET Array

Key Features

  • Low on-resistance R DS(on) 0.45 , VGS = 10 V, I D = 1 A.
  • Low drive current.
  • High speed switching.
  • High density mounting Outline SP-10 3 D 4 G 2G 5 D 6 G 7 D 8 G 9 D 12 34 56 78 9 10 1S S 10 1, 10. Source 2, 4, 6, 8. Gate 3, 5, 7, 9. Drain 4AK25 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel dissipation Cha.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer

Other Datasheets by Hitachi Semiconductor (now Renesas)

Part Number Description
4AK20 Silicon N-Channel Power MOS FET Array
4AK21 Silicon N-Channel Power MOS FET Array
4AK22 Silicon N-Channel Power MOS FET Array
4AK23 Silicon N-Channel Power MOS FET Array
4AK26 Silicon N-Channel Power MOS FET Array

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
4AK25 Silicon N-Channel Power MOS FET Array Application High speed power switching Features • Low on-resistance R DS(on) 0.45 , VGS = 10 V, I D = 1 A • Low drive current • High speed switching • High density mounting Outline SP-10 3 D 4 G 2G 5 D 6 G 7 D 8 G 9 D 12 34 56 78 9 10 1S S 10 1, 10. Source 2, 4, 6, 8. Gate 3, 5, 7, 9. Drain 4AK25 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. 4 Devices operation Symbol VDSS VGSS ID I D(pulse)* I DR Pch (Tc = 25°C)* Pch* Tch Tstg 2 2 1 Ratings 60 ±20 1.5 4.5 1.5 24 3.