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4AK15 - Silicon N-Channel Power MOS FET Array

Key Features

  • Low on-resistance R DS(on) ≤ 0.07 , VGS = 10 V, I D = 8 A R DS(on) ≤ 0.095 , VGS = 4 V, I D = 8 A.
  • Capable of 4 V gate drive.
  • Low drive current.
  • High speed switching.
  • High density mounting.
  • Suitable for motor driver, solenoid driver and lamp driver 4AK15 Outline SP-10 3 D 4 G 2G 5 D 6 G 7 D 8 G 9 D 12 34 56 78 9 10 1S S 10 1, 10. Source 2, 4, 6, 8. Gate 3, 5, 7, 9. Drain Absolute Maximum Ratings (Ta = 25°C) (1 Unit) Item Drain to.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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4AK15 Silicon N-Channel Power MOS FET Array Application High speed power switching Features • Low on-resistance R DS(on) ≤ 0.07 , VGS = 10 V, I D = 8 A R DS(on) ≤ 0.095 , VGS = 4 V, I D = 8 A • Capable of 4 V gate drive • Low drive current • High speed switching • High density mounting • Suitable for motor driver, solenoid driver and lamp driver 4AK15 Outline SP-10 3 D 4 G 2G 5 D 6 G 7 D 8 G 9 D 12 34 56 78 9 10 1S S 10 1, 10. Source 2, 4, 6, 8. Gate 3, 5, 7, 9. Drain Absolute Maximum Ratings (Ta = 25°C) (1 Unit) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2.