Datasheet4U Logo Datasheet4U.com

4AJ11 - Silicon P-Channel Power MOS FET Array

Key Features

  • Low on-resistance R DS(on) 0.13 , VGS =.
  • 10 V, I D =.
  • 4 A R DS(on) 0.17 , VGS =.
  • 4 V, I D =.
  • 4 A.
  • Capable of 4 V gate drive.
  • Low drive current.
  • High speed switching.
  • High density mounting.
  • Suitable for motor driver and solenoid driver and lamp driver 4AJ11 Outline SP-12 12 1 G 2 D 5 G 4 D 8 G 9 D 12 G 11 D 34 56 78 9 10 1112 S 3 S 6 S 7 S 10 1, 5, 8, 12. Gate 2, 4, 9, 11. Drain 3, 6, 7, 10. Source A.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer

Other Datasheets by Hitachi Semiconductor (now Renesas)

Part Number Description

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
4AJ11 Silicon P-Channel Power MOS FET Array Application High speed power switching Features • Low on-resistance R DS(on) 0.13 , VGS = –10 V, I D = –4 A R DS(on) 0.17 , VGS = –4 V, I D = –4 A • Capable of 4 V gate drive • Low drive current • High speed switching • High density mounting • Suitable for motor driver and solenoid driver and lamp driver 4AJ11 Outline SP-12 12 1 G 2 D 5 G 4 D 8 G 9 D 12 G 11 D 34 56 78 9 10 1112 S 3 S 6 S 7 S 10 1, 5, 8, 12. Gate 2, 4, 9, 11. Drain 3, 6, 7, 10. Source Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2.