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2SK3163
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-736A (Z) 2nd Edition February 1999 Features
• Low on-resistance R DS(on) = 6 mΩ typ. • Low drive current • 4 V gate drive device can be driven from 5 V source
Outline
TO–3P
D
G
1
S
2
3
1. Gate 2. Drain (Flange) 3. Source
2SK3163
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR I AP
Note 3 Note 3 Note 2 Note 1
Ratings 60 ±20 75 300 75 50 214 110 150 –55 to +150
Unit V V A A A A mJ W °C °C
EAR Pch Tch
Tstg
1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3.
2SK3163 Datasheet
