Datasheet4U Logo Datasheet4U.com

2SK2959 - Silicon N Channel MOS FET

Features

  • Low on-resistance R DS(on) = 7mΩ typ.
  • 4V gate drive devices.
  • High speed switching Outline TO.
  • 220AB D G 1 2 S 3 1. Gate 2. Drain(Flange 3. Source 2SK2959 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Note: 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C Symbol VDSS VGSS ID I.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SK2951 N-Channel Silicon MOSFET Sanyo Semicon Device
2SK2952 N-CHANNEL MOS TYPE TRANSISTOR Toshiba Semiconductor
2SK2953 Silicon N Channel MOS Type Field Effect Transistor Toshiba Semiconductor
2SK2954-MR Power MOSFET Fuji Electric
2SK2955 Silicon N Channel MOS FET Renesas

Other Datasheets by Hitachi Semiconductor (now Renesas)

Part Number Description
2SK2955 Silicon N Channel MOS FET
2SK2956 Silicon N-Channel MOSFET
2SK2957 Silicon N Channel MOS FET
2SK2957L Silicon N Channel MOS FET
2SK2957S Silicon N Channel MOS FET

Full PDF Text Transcription

Click to expand full text
2SK2959 Silicon N Channel MOS FET High Speed Power Switching ADE-208-569C (Z) 4th. Edition Aug 1998 Features • Low on-resistance R DS(on) = 7mΩ typ. • 4V gate drive devices. • High speed switching Outline TO–220AB D G 1 2 S 3 1. Gate 2. Drain(Flange 3. Source 2SK2959 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Note: 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C Symbol VDSS VGSS ID I D(pulse) I DR Pch Tch Tstg Note2 Note1 Ratings 30 ±20 50 200 50 75 150 –55 to +150 Unit V V A A A W °C °C Electrical Characteristics (Ta = 25°C) Item Symbol Min 30 ±20 — — 1.0 — — 25 — — — — — — — — — Typ — — — — — 7.
Published: |