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2SK2938 - Silicon N Channel MOS FET

Features

  • Low on-resistance R DS =0.026 Ω typ.
  • High speed switching.
  • 4V gate drive device can be driven from 5V source Outline LDPAK 4 4 D G 1 2 1 2 3 3 S 1. Gate 2. Drain 3. Source 4. Drain 2SK2938(L),2SK2938(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature N.

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Other Datasheets by Hitachi Semiconductor (now Renesas)

Part Number Description
2SK2938L Silicon N Channel MOS FET
2SK2938S Silicon N Channel MOS FET
2SK2930 Silicon N Channel MOS FET
2SK2931 Silicon N-Channel MOSFET
2SK2932 Silicon N Channel MOS FET

Full PDF Text Transcription

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2SK2938(L),2SK2938(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-561B (Z) 3rd. Edition Jun 1998 Features • Low on-resistance R DS =0.026 Ω typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline LDPAK 4 4 D G 1 2 1 2 3 3 S 1. Gate 2. Drain 3. Source 4. Drain 2SK2938(L),2SK2938(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR I AP Note3 Note3 Note2 Note1 Ratings 60 ±20 25 100 25 20 34 50 150 –55 to +150 Unit V V A A A A mJ W °C °C EAR Pch Tch Tstg 1.
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