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2SK2096 - Silicon N-Channel MOSFET

Key Features

  • Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for switching regulator, DC-DC converter Avalanche ratings Outline TO-3P D G 1 2 3 1. Gate 2. Drain (Flange) 3. Source S 2SK2096 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Avalanche current Avalan.

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Other Datasheets by Hitachi Semiconductor (now Renesas)

Part Number Description
2SK2097 Silicon N-Channel MOS FET
2SK2007 Silicon N-Channel MOS FET
2SK2008 Silicon N-Channel MOS FET
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2SK2059L Silicon N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2SK2096 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for switching regulator, DC-DC converter Avalanche ratings Outline TO-3P D G 1 2 3 1. Gate 2. Drain (Flange) 3. Source S 2SK2096 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C 3.