Datasheet4U Logo Datasheet4U.com

2SK1318 - Silicon N-Channel MOS FET

Key Features

  • Low on-resistance High speed switching Low drive current 4V gate drive device can be driven from 5V source Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline TO-220FM D G 1 2 3 1. Gate 2. Drain 3. Source S 2SK1318 www. DataSheet4U. com Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel diss.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SK1310 N-Channel MOSFET Toshiba Semiconductor
2SK1310A N-Channel MOSFET Toshiba Semiconductor
2SK1317 Silicon N-Channel MOSFET Renesas
2SK1319 N-Channel MOSFET Transistor Inchange Semiconductor
2SK1300 Silicon N-Channel MOSFET Renesas

Other Datasheets by Hitachi Semiconductor (now Renesas)

Part Number Description
2SK1313 Silicon N-Channel MOSFET
2SK1313L Silicon N-Channel MOSFET
2SK1313S Silicon N-Channel MOSFET
2SK1314 Silicon N-Channel MOSFET
2SK1314L Silicon N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com 2SK1318 Silicon N Channel MOS FET High Speed Power Switching ADE-208-1269 (Z) 1st. Edition Jan. 2001 Features • • • • • Low on-resistance High speed switching Low drive current 4V gate drive device can be driven from 5V source Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline TO-220FM D G 1 2 3 1. Gate 2. Drain 3. Source S 2SK1318 www.DataSheet4U.com Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2.