Click to expand full text
2SJ555
Silicon P Channel MOS FET High Speed Power Switching
ADE-208-634A (Z) 2nd. Edition Jun 1998 Features
• Low on-resistance R DS(on) = 0.017 Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching.
Outline
TO–3P
D
G
1
S
2
3
1. Gate 2. Drain (Flange) 3. Source
2SJ555
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Symbol VDSS VGSS ID I D(pulse)
Note1
Ratings –60 ±20 –60 –240 –60
Unit V V A A A A mJ W °C °C
Body-drain diode reverse drain current I DR Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note: I AP
Note3 Note3 Note2
–60 308 125 150 –55 to +150
EAR
Pch Tch
Tstg
1. PW ≤ 10µs, duty cycle ≤ 1 % 2. Value at Tc = 25° C 3.
2SJ555 Datasheet
