2SJ504
Features
- Low on-resistance R DS(on) = 0.042Ω typ.
- Low drive current.
- 4V gate drive devices.
- High speed switching.
Outline
TO- 220FM
1 2
1. Gate 2. Drain 3. Source
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID I D(pulse)- I DR I AP
- 3 3 2 1
Ratings
- 60 ±20
- 20
- 80
- 20
- 20 34 30 150
- 55 to +150
Unit V V A A A A m J W °C °C
EAR-
Pch- Tch Tstg
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C 3. Value at Ta = 25°C, Rg ≥ 50 Ω, L=100µH
Electrical Characteristics (Ta = 25°C)
Item Drain to source breakdown voltage Gate to source breakdown voltage Zero gate voltege drain current Gate to source leak current Symbol V(BR)DSS V(BR)GSS I DSS I GSS Min
- 60 ±20
- -
- 1.0
- - 10
- -
- -
- -
- -
- Typ
- -
- -
- 0.042...
