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2SJ484 - P-Channel MOSFET

Features

  • Low on-resistance R DS(on) = 0.18 Ω typ. (at V GS =.
  • 10V, ID =.
  • 1A).
  • Low drive current.
  • High speed switching.
  • 4V gate drive devices. Outline UPAK 2 3 1 4 D G 1. Gate 2. Drain 3. Source 4. Drain S 2SJ484 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Symbol VDSS V.

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Full PDF Text Transcription

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2SJ484 Silicon P-Channel MOS FET High Speed Power Switching ADE-208-501 A 2nd. Edition Features • Low on-resistance R DS(on) = 0.18 Ω typ. (at V GS = –10V, ID = –1A) • Low drive current • High speed switching • 4V gate drive devices. Outline UPAK 2 3 1 4 D G 1. Gate 2. Drain 3. Source 4. Drain S 2SJ484 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID I D(pulse)* I DR Pch* Tch Tstg 2 1 Ratings –30 ±20 –2 –4 –2 1 150 –55 to +150 Unit V V A A A W °C °C Notes: 1. PW ≤ 100 µs, duty cycle ≤ 10 % 2. When using aluminium ceramic board (12.5 x 20 x 0.
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