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2SJ280 - SILICON P-CHANNEL MOSFET

Download the 2SJ280 datasheet PDF. This datasheet also covers the 2SJ290 variant, as both devices belong to the same silicon p-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

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Key Features

  • Low on.
  • resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source.
  • Suitable for Switching regulator, DC.
  • DC converter.
  • Avalanche Ratings 1 1 2, 4 2 3 2 3 1 1. Gate 2. Drain 3. Source 4. Drain 3 Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body.
  • drain diode reverse drain current Avalanch.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (2SJ290_HitachiSemiconductor.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
2SJ281 P-Channel MOSFET Sanyo Semicon Device
2SJ284 P-Channel MOSFET Sanyo Semicon Device
2SJ285 P-Channel MOSFET Sanyo Semicon Device
2SJ287 P-Channel MOSFET Sanyo Semicon Device
2SJ288 P-Channel MOSFET Sanyo Semicon Device

Other Datasheets by Hitachi Semiconductor (now Renesas)

Part Number Description
2SJ217 P-Channel MOSFET
2SJ221 P-Channel MOSFET
2SJ222 P-Channel MOSFET
2SJ244 P-Channel MOSFET
2SJ245 Silicon P-Channel MOS FET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com 2SJ280 L , 2SJ280 S Silicon P Channel MOS FET Application LDPAK High speed power switching 4 4 Features • • • • Low on–resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source • Suitable for Switching regulator, DC – DC converter • Avalanche Ratings 1 1 2, 4 2 3 2 3 1 1. Gate 2. Drain 3. Source 4.