2SH29 - N-Channel MOSFET

Datasheet Summary

Features

High speed switching.
Low on-voltage Outline TO.
220AB C G 1 E 2 3 1. Gate 2. Collector (Flange) 3. Emitter 2SH29 Absolute Maximum Ratings (Ta = 25°C) Item Collector to Emitter voltage Gate to Emitter voltage Collector current Collector peak current Collector dissipation Channel temperature Storage temperature Note: 1. Value at Tc = 25°C Symbol VCES VGES IC ic(peak) PC Tj Tstg Note1 Ratings 600 ±20 30 60 75 150.
55 to +150 Unit V V A A W °C °C Electrica.

Hitachi Semiconductor

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Datasheet Details

Part number	2SH29
Manufacturer	Hitachi Semiconductor
File Size	43.60 KB
Description	N-Channel MOSFET
Datasheet	2SH29 Datasheet
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Full PDF Text Transcription

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2SH29 Silicon N Channel IGBT High Speed Power Switching ADE-208-791A(Z) 2nd. Edition May 1999 Features • High speed switching • Low on-voltage Outline TO–220AB C G 1 E 2 3 1. Gate 2. Collector (Flange) 3. Emitter 2SH29 Absolute Maximum Ratings (Ta = 25°C) Item Collector to Emitter voltage Gate to Emitter voltage Collector current Collector peak current Collector dissipation Channel temperature Storage temperature Note: 1. Value at Tc = 25°C Symbol VCES VGES IC ic(peak) PC Tj Tstg Note1 Ratings 600 ±20 30 60 75 150 –55 to +150 Unit V V A A W °C °C Electrical Characteristics (Ta = 25°C) Item Zero gate voltage collector current Gate to emitter leak current Symbol I CES I GES Min — — 6.0 — — — — — — Typ — — — 2.1 1850 200 310 300 520 Max 100 ±1 8.0 2.

Published: Mar 30, 2005 |