2SH17 - Silicon N-Channel IGBT

Datasheet Summary

Description

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Features

2.
High speed switching.
Low on saturation voltage 1 1 3 2 3 1. Gate 2. Collector 3. Emitter Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Collector to emitter voltage Gate to emitter voltage Collector current Collector peak current Collectorl dissipation Channel temperature Storage temperature Symbol VCES Ratings 600 ±20 12 20 50 150.
55 to +150 Unit V V A A W °C °C.

Hitachi Semiconductor

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Datasheet Details

Part number	2SH17
Manufacturer	Hitachi Semiconductor
File Size	41.30 KB
Description	Silicon N-Channel IGBT
Datasheet	2SH17 Datasheet
Additional preview pages of the 2SH17 datasheet.

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Full PDF Text Transcription

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ADE–208–290 (Z) 2SH17 Silicon N-Channel IGBT 1st. Edition Feb. 1995 Application TO–220AB High speed power switching Features 2 • High speed switching • Low on saturation voltage 1 1 3 2 3 1. Gate 2. Collector 3.

Published: Mar 30, 2005 |