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2SH16 - Silicon N-Channel IGBT

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2.

Features

  • 2.
  • High speed switching.
  • Low on saturation voltage 1 3 1 2 1. Gate 2. Collector 3. Emitter 3 Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Collector to emitter voltage Gate to emitter voltage Collector current Collector peak current Collector dissipation Channel temperature Storage temperature Symbol VCES Ratings 600 ±20 75 150 200 150.
  • 55 to +150 Unit V V A A W °C °C.

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Datasheet Details

Part number 2SH16
Manufacturer Hitachi Semiconductor
File Size 42.87 KB
Description Silicon N-Channel IGBT
Datasheet download datasheet 2SH16 Datasheet
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Full PDF Text Transcription

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ADE–208–289 (Z) 2SH16 Silicon N-Channel IGBT 1st. Edition Nov. 1994 Application High speed power switching TO–3PL Features 2 • High speed switching • Low on saturation voltage 1 3 1 2 1. Gate 2. Collector 3.
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