2SH15 - Silicon N-Channel IGBT

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Description

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Features

High speed switching.
Low on saturation voltage 1 2 3 1 2 3 1. Gate 2. Collector 3. Emitter Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Collector to emitter voltage Gate to emitter voltage Collector current Collector peak current Collector dissipation Channel temperature Storage temperature Symbol VCES Ratings 600 ±20 50 100 150 150.
55 to +150 Unit V V A A W °C °C.

Hitachi Semiconductor

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Datasheet Details

Part number	2SH15
Manufacturer	Hitachi Semiconductor
File Size	43.61 KB
Description	Silicon N-Channel IGBT
Datasheet	2SH15 Datasheet
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ADE–208–288 (Z) 2SH15 Silicon N-Channel IGBT 1st. Edition Feb. 1995 Application High speed power switching TO–3P Features • High speed switching • Low on saturation voltage 1 2 3 1 2 3 1. Gate 2. Collector 3.

Published: Mar 30, 2005 |