2SH13 - Silicon N-Channel IGBT

Datasheet Summary

Description

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Products and product specifications may be subject to change without notice.

Features

High speed switching.
Low on saturation voltage 1 2 1 3 2 3 1. Gate 2. Collector 3. Emitter Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Collector to emitter voltage Gate to emitter voltage Collector current Collector peak current Collector dissipation Channel temperature Storage temperature Symbol VCES Ratings 600 ±20 20 40 75 150.
55 to +150 Unit V V A A W °C °C.

Hitachi Semiconductor

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Datasheet Details

Part number	2SH13
Manufacturer	Hitachi Semiconductor
File Size	43.06 KB
Description	Silicon N-Channel IGBT
Datasheet	2SH13 Datasheet
Additional preview pages of the 2SH13 datasheet.

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Full PDF Text Transcription

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ADE–208–286 (Z) 2SH13 Silicon N-Channel IGBT 1st. Edition Feb. 1995 Application High speed power switching TO–220AB Features • High speed switching • Low on saturation voltage 1 2 1 3 2 3 1. Gate 2. Collector 3.

Published: Mar 30, 2005 |