The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
2SD2019
Silicon NPN Epitaxial
Application
Low frequency power amplifier
Outline
TO-126 MOD
2
3 1. Emitter 2. Collector 3. Base ID 15 kΩ (Typ) 0.5 kΩ (Typ) 1
1
2
3
2SD2019
Absolute Maximum Ratings (Ta = 25°C)
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature C to E diode forward current Note: 1. Value at TC = 25°C. Symbol VCBO VCEO VEBO IC I C(peak) PC * Tj Tstg ID*
1 1
Ratings 150 80 8 1.5 3 10 150 –55 to +150 1.5
Unit V V V A A W °C °C A
Electrical Characteristics (Ta = 25°C)
Item Collector to base breakdown voltage Symbol V(BR)CBO Min 150 80 7 — — 2000 5000 1000 — — — Typ — — — — — — — — — — — Max — — — 5 5 — 30000 — 1.5 2.0 3.
2SD2019 Datasheet
