SFE6001T2 - 60V 12A N-CHANNEL POWER MOSFET

Description

The SFE6001T2 uses advanced trench technology and design to provide excellent RDS(on) with low gate charge.

It can be used in a wide variety applications.

Features

VDS=60V,ID=12A.
RDS(on) TYP: 31mΩ@VGS=10V ID=10A.

HiSemicon

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Datasheet Details

Part number	SFE6001T2
Manufacturer	HiSemicon
File Size	1.98 MB
Description	60V 12A N-CHANNEL POWER MOSFET
Datasheet	SFE6001T2 Datasheet
Additional preview pages of the SFE6001T2 datasheet.

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Full PDF Text Transcription

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60V,12A N-CHANNEL POWER MOSFET GENERAL DESCRIPTION The SFE6001T2 uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety applications. Features ◆VDS=60V,ID=12A ◆RDS(on) TYP: 31mΩ@VGS=10V ID=10A Applications ◆Power faction correction (PFC) ◆Switched mode power supplies (SMPS) ◆Uninterruptible power supply (UPS) ◆LED lighting power SFE6001T2 ORDERING INFORMATION Part No. SFE6001T2 Package SOT89-3L Http://www.hi-semicon.com Marking SFE6001T2 Material Pb Free Packing Reel Rev 1.0 Page 1 of 8 SFE6001T2 ABSOLUTE MAXIMUM RATINGS (TJ=25C unless otherwise noted) Characteristics Symbol Ratings Drain-Source Voltage VDS 60 Gate-Source Voltage VGS ±20 TC = 25C 12 Drain Current ID TC = 100C 9.

Published: Aug 26, 2025 |