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SCF65R190C - 650V N-CHANNEL MOSFE

Description

The Power MOSFET is fabricated using advanced super junction technology.

The resulting device has extremely low on resistance, making itespecially suitable for applications which requiresuperior power density and outstanding efficiency.

Features

  • VDS(V)=650V,ID=20A.
  • RDS(ON) TYP:165mΩ@VGS=10V ID=10A MAX:190mΩ.

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Datasheet Details

Part number SCF65R190C
Manufacturer HiSemicon
File Size 672.44 KB
Description 650V N-CHANNEL MOSFE
Datasheet download datasheet SCF65R190C Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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650V N-CHANNEL MOSFET GENERAL DESCRIPTION The Power MOSFET is fabricated using advanced super junction technology. The resulting device has extremely low on resistance, making itespecially suitable for applications which requiresuperior power density and outstanding efficiency. Features ◆VDS(V)=650V,ID=20A ◆RDS(ON) TYP:165mΩ@VGS=10V ID=10A MAX:190mΩ Applications ◆Power faction correction (PFC) ◆Switched mode power supplies (SMPS) ◆Uninterruptible power supply (UPS) ◆LED lighting power SCF65R190C 1 23 1:Gate 2:Darin 3:Source ORDERING INFORMATION Part No. SCF65R190C Package TO-220F-3L Marking SCF65R190C Material Pb Free Packing Tube Http://www.hi-semicon.com Rev 1.
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