Download the HMJE3055T datasheet PDF. This datasheet also covers the HMJE3055T_Hi variant, as both devices belong to the same npn epitaxial planar transistor family and are provided as variant models within a single manufacturer datasheet.
The HMJE3055T is designed for general purpose of amplifier and switching applications.
Maximum Temperature Storage Temperature -55 ~ +150 °C Junction Temperature 150 °C Maximum Maximum Power Dissipation Total Power Dissipation (TC=
| Part number | HMJE3055T |
|---|---|
| Manufacturer | Hi-Sincerity Mocroelectronics |
| File Size | 41.73 KB |
| Description | NPN EPITAXIAL PLANAR TRANSISTOR |
| Datasheet |
 HMJE3055T Datasheet
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| Part Number | Description | Manufacturer |
|---|---|---|
| HMJE13001 | NPN Triple Diffused Planar Type High Voltage Transistor | Hi-Sincerity |
| HMJE13001 | High Voltage Transistor | Forward Holdings |
| HMJE13001 | NPN Epitaxial Silicon Transistor | Unisonic |
| HMJE13007A | NPN EPITAXIAL PLANAR TRANSISTOR | Hi-Sincerity |
| HMJ1 | High Dynamic Range FET Mixer | WJ Communication |
| Part Number | Description |
|---|---|
| HMJE13003 | NPN EPITAXIAL PLANAR TRANSISTOR |
| HMJE13003D | NPN EPITAXIAL PLANAR TRANSISTOR |
| HMJE13003T | NPN EPITAXIAL PLANAR TRANSISTOR |
| HMJE13005 | NPN EPITAXIAL PLANAR TRANSISTOR |
| HMJE13007 | NPN EPITAXIAL PLANAR TRANSISTOR |
The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.
