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HBC327 - PNP EPITAXIAL PLANAR TRANSISTOR

Download the HBC327 datasheet PDF. This datasheet also covers the HBC327_Hi variant, as both devices belong to the same pnp epitaxial planar transistor family and are provided as variant models within a single manufacturer datasheet.

Description

This HBC327 is designed for driver and output-stages of audio amplifiers.

Features

  • High DC Current Gain: 100-600 at IC=100mA,VCE=1V.
  • Complementary to HBC337 TO-92 Absolute Maximum Ratings.
  • Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum.
  • Maximum Power Dissipation Total Power Dissipation (TA=25°C) 625 mW.
  • Maximum Voltages and Currents (TA=25°C) VCBO Collector to Base Voltage.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (HBC327_Hi-SincerityMocroelectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number HBC327
Manufacturer Hi-Sincerity Mocroelectronics
File Size 52.12 KB
Description PNP EPITAXIAL PLANAR TRANSISTOR
Datasheet download datasheet HBC327 Datasheet

Full PDF Text Transcription

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HI-SINCERITY MICROELECTRONICS CORP. HBC327 PNP EPITAXIAL PLANAR TRANSISTOR Spec. No. : HE6413 Issued Date : 1993.01.15 Revised Date : 2005.01.25 Page No. : 1/5 Description This HBC327 is designed for driver and output-stages of audio amplifiers. Features • High DC Current Gain: 100-600 at IC=100mA,VCE=1V • Complementary to HBC337 TO-92 Absolute Maximum Ratings • Maximum Temperatures Storage Temperature ........................................................................................................................... -55 ~ +150 °C Junction Temperature ................................................................................................................... +150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (TA=25°C) ....................................
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