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HA3669 - NPN EPITAXIAL PLANAR TRANSISTOR

Download the HA3669 datasheet PDF. This datasheet also covers the HA3669_Hi variant, as both devices belong to the same npn epitaxial planar transistor family and are provided as variant models within a single manufacturer datasheet.

Description

The HA3669 is designed for using in power amplifier applications, power switching application.

Maximum Temperatures Tstg Storage Temperature -55 ~ +150 °C Tj Junction Temperature +150 °C Maximum Power Dissipation Total Power Dissipat

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Note: The manufacturer provides a single datasheet file (HA3669_Hi-SincerityMocroelectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number HA3669
Manufacturer Hi-Sincerity Mocroelectronics
File Size 45.23 KB
Description NPN EPITAXIAL PLANAR TRANSISTOR
Datasheet download datasheet HA3669 Datasheet

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Part Number Description

Full PDF Text Transcription

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HI-SINCERITY MICROELECTRONICS CORP. HA3669 NPN EPITAXIAL PLANAR TRANSISTOR Spec. No. : HA200210 Issued Date : 2000.11.01 Revised Date : 2005.01.20 Page No. : 1/4 Description The HA3669 is designed for using in power amplifier applications, power switching application. Absolute Maximum Ratings (TA=25°C) TO-92 • Maximum Temperatures Tstg Storage Temperature.................................................................................................................... -55 ~ +150 °C Tj Junction Temperature ................................................................................................................................ +150 °C • Maximum Power Dissipation Total Power Dissipation (TA=25°C) ..................................................................................
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