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H40N03E - N-Channel Enhancement-Mode MOSFET

Download the H40N03E datasheet PDF. This datasheet also covers the H40N03E_Hi variant, as both devices belong to the same n-channel enhancement-mode mosfet family and are provided as variant models within a single manufacturer datasheet.

Features

  • RDS(on)=16mΩ@VGS=10V, ID=20A.
  • RDS(on)=25mΩ@VGS=4.5V, ID=20A.
  • Advanced trench process technology.
  • High Density Cell Design for Ultra Low On-Resistance.
  • Specially Designed for DC/DC Converters and Motor Drivers.
  • Fully Characterized Avalanche Voltage and Current.
  • Improved Shoot-Through FOM 1 2 3 3-Lead Plastic TO-220AB Package Code: E Pin 1: Gate Pin 2 & Tab: Drain Pin 3: Source D G S Internal Schematic Diagram Maximum Ratings & Th.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (H40N03E_Hi-SincerityMocroelectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number H40N03E
Manufacturer Hi-Sincerity Mocroelectronics
File Size 87.49 KB
Description N-Channel Enhancement-Mode MOSFET
Datasheet download datasheet H40N03E Datasheet

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Part Number Description

Full PDF Text Transcription

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HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : MOS200517 Issued Date : 2005.12.01 Revised Date : 2005.12.16 Page No. : 1/5 H40N03E N-Channel Enhancement-Mode MOSFET (25V, 40A) H40N03E Pin Assignment Tab Features • RDS(on)=16mΩ@VGS=10V, ID=20A • RDS(on)=25mΩ@VGS=4.
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