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HLB125HE - NPN Epitaxial Planar Transistor

Download the HLB125HE datasheet PDF. This datasheet also covers the HLB125HE_Hi variant, as both devices belong to the same npn epitaxial planar transistor family and are provided as variant models within a single manufacturer datasheet.

Description

The HLB125HE is designed for lighting applications and low switch-mode power supplies.

And it is high voltage capability and high switching speeds.

Features

  • High Speed Switching.
  • Low Saturation Voltage.
  • High Reliability TO-220 Absolute Maximum Ratings (TA=25°C).
  • Maximum Temperatures Storage Temperature -50 ~ +150 °C Junction Temperature 150 °C Maximum.
  • Maximum Power Dissipation Total Power Dissipation (TC=25°C) 75 W.
  • Maximum Voltages.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (HLB125HE_Hi-SincerityMicroelectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number HLB125HE
Manufacturer Hi-Sincerity Microelectronics
File Size 50.28 KB
Description NPN Epitaxial Planar Transistor
Datasheet download datasheet HLB125HE Datasheet

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Other Datasheets by Hi-Sincerity Microelectronics

Part Number Description

Full PDF Text Transcription

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HI-SINCERITY MICROELECTRONICS CORP. HLB125HE NPN EPITAXIAL PLANAR TRANSISTOR Spec. No. : HE200214 Issued Date : 2002.09.01 Revised Date : 2004.11.08 Page No. : 1/5 Description The HLB125HE is designed for lighting applications and low switch-mode power supplies. And it is high voltage capability and high switching speeds. Features • High Speed Switching • Low Saturation Voltage • High Reliability TO-220 Absolute Maximum Ratings (TA=25°C) • Maximum Temperatures Storage Temperature ........................................................................................................................... -50 ~ +150 °C Junction Temperature .....................................................................................................................
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