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IRF223 - N-Channel Power MOSFETs

Download the IRF223 datasheet PDF. This datasheet also covers the IRF220 variant, as both devices belong to the same n-channel power mosfets family and are provided as variant models within a single manufacturer datasheet.

Description

These are N-Channel enhancement mode silicon gate power field effect transistors.

They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation.

Features

  • 4.0A and 5.0A, 150V and 200V.
  • rDS(ON) = 0.8Ω and 1.2Ω.
  • SOA is Power Dissipation Limited.
  • Nanosecond Switching Speeds.
  • Linear Transfer Characteristics.
  • High Input Impedance.
  • Majority Carrier Device.
  • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Ordering Information PART NUMBER.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRF220-Harris.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number IRF223
Manufacturer Harris
File Size 68.17 KB
Description N-Channel Power MOSFETs
Datasheet download datasheet IRF223 Datasheet

Full PDF Text Transcription

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Semiconductor October 1997 IRF220, IRF221, IRF222, IRF223 4.0A and 5.0A, 150V and 200V, 0.8 and 1.2 Ohm, N-Channel Power MOSFETs Features • 4.0A and 5.0A, 150V and 200V • rDS(ON) = 0.8Ω and 1.2Ω • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Majority Carrier Device • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Ordering Information PART NUMBER PACKAGE BRAND IRF220 TO-204AA IRF220 IRF221 TO-204AA IRF221 IRF222 TO-204AA IRF222 IRF223 TO-204AA IRF223 NOTE: When ordering, use the entire part number. Description These are N-Channel enhancement mode silicon gate power field effect transistors.
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