Datasheet4U Logo Datasheet4U.com

HGT1S3N60C3D - UFS Series N-Channel IGBT

Download the HGT1S3N60C3D datasheet PDF. This datasheet also covers the HGTP3N60C3D variant, as both devices belong to the same ufs series n-channel igbt family and are provided as variant models within a single manufacturer datasheet.

Description

The HGTP3N60C3D, HGT1S3N60C3D, and HGT1S3N60C3DS are MOS gated high voltage switching devices combining the best

Features

  • 6A, 600V at TC = 25oC.
  • 600V Switching SOA Capability.
  • Typical Fall Time.
  • . . . . 130ns at TJ = 150oC.
  • Short Circuit Rating.
  • Low Conduction Loss.
  • Hyperfast Anti-Parallel Diode.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (HGTP3N60C3D_HarrisCorporation.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number HGT1S3N60C3D
Manufacturer Harris Corporation
File Size 248.09 KB
Description UFS Series N-Channel IGBT
Datasheet download datasheet HGT1S3N60C3D Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
HGT1S3N60C3D 6A 600V UFS Series N-Channel IGBT Fairchild Semiconductor
HGT1S3N60C3DS 6A 600V UFS Series N-Channel IGBT Fairchild Semiconductor
HGT1S3N60C3DS 6A 600V UFS Series N-Channel IGBT Intersil Corporation
HGT1S3N60A4DS 600V SMPS Series N-Channel IGBT Fairchild Semiconductor
HGT1S3N60A4DS 600V SMPS Series N-Channel IGBT Intersil Corporation

Other Datasheets by Harris Corporation

Part Number Description
HGT1S3N60C3DS UFS Series N-Channel IGBT
HGTG12N60C3D UFS Series N-Channel IGBT
HGTP3N60C3D UFS Series N-Channel IGBT

Full PDF Text Transcription

Click to expand full text
S E M I C O N D U C T O R HGTP3N60C3D, HGT1S3N60C3D, HGT1S3N60C3DS 6A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes Packaging JEDEC TO-220AB EMITTER COLLECTOR GATE COLLECTOR (FLANGE) www.DataSheet4U.com January 1997 Features • 6A, 600V at TC = 25oC • 600V Switching SOA Capability • Typical Fall Time . . . . . . . . . . . . . . 130ns at TJ = 150oC • Short Circuit Rating • Low Conduction Loss • Hyperfast Anti-Parallel Diode Description The HGTP3N60C3D, HGT1S3N60C3D, and HGT1S3N60C3DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor.
Published: |