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HYG400P10LR1D - P-Channel Enhancement Mode MOSFET

Description

TO-252-2L TO-251-3L TO-251-3S Applications Portable equipment and battery powered systems DC-DC Converters

Motor control.

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Datasheet Details

Part number HYG400P10LR1D
Manufacturer HUAYI
File Size 1.36 MB
Description P-Channel Enhancement Mode MOSFET
Datasheet download datasheet HYG400P10LR1D Datasheet

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Full PDF Text Transcription

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HYG400P10LR1D/U/V P-Channel Enhancement Mode MOSFET Feature  -100V/-40A RDS(ON)= 42mΩ(typ.) @ VGS = -10V RDS(ON)= 48mΩ(typ.) @ VGS = -4.5V  100% Avalanche Tested  Reliable and Rugged  Halogen Free and Green Devices Available (RoHS Compliant) Pin Description TO-252-2L TO-251-3L TO-251-3S Applications  Portable equipment and battery powered systems  DC-DC Converters  Motor control. Ordering and Marking Information D G400P10 XYMXXXXXX U G400P10 XYMXXXXXX V G400P10 XYMXXXXXX Package Code D: TO-252-2L V: TO-251-3S Date Code XYMXXXXXX P-Channel MOSFET U: TO-251-3L Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plateTermiNation finish; which are fully compliant with RoHS.
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