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HYG3208NA3B - N-Channel Enhancement Mode MOSFET

Download the HYG3208NA3B datasheet PDF. This datasheet also covers the HYG3208NA3P variant, as both devices belong to the same n-channel enhancement mode mosfet family and are provided as variant models within a single manufacturer datasheet.

Description

TO-220FB-3L TO-263-2L Applications Switching application Power management for inverter system N-Channel MOSFET Ordering and Marking Information P HY3208 XYMXXXXXX B HY3208 XYMXXXXXX Package Code P :TO-220FB-3L Date Code XYMXXXXXX B:TO-263-2L Note: HUAYI lead-free products conta

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Note: The manufacturer provides a single datasheet file (HYG3208NA3P-HUAYI.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number HYG3208NA3B
Manufacturer HUAYI
File Size 476.47 KB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet HYG3208NA3B Datasheet

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Full PDF Text Transcription

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HYG3208NA3P/B Feature  80V/120A RDS(ON)= 7mΩ(typ.)@VGS = 10V  100% Avalanche Tested  Reliable and Rugged  Lead-Free and Green DevicesAvailable (RoHS Compliant) N-Channel Enhancement Mode MOSFET Pin Description TO-220FB-3L TO-263-2L Applications  Switching application  Power management for inverter system N-Channel MOSFET Ordering and Marking Information P HY3208 XYMXXXXXX B HY3208 XYMXXXXXX Package Code P :TO-220FB-3L Date Code XYMXXXXXX B:TO-263-2L Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate TermiNation finish;which are fully compliant with RoHS. HUAYI lead-free products meet or exceed the lead-Free requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature.
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