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HYG260P03LR1S - P-Channel Enhancement Mode MOSFET

Description

z -30V/-8A RDS(ON) = 21.6mΩ(typ.) @VGS =- 10V RDS(ON) = 42 mΩ(typ.) @VGS = -4.5V z 100% Avalanche Tested z Reliable and Rugged z Halogen Free and Green Devices Available (RoHS Compliant) Pin Description SOP-8L Applications z Power Management for DC/DC z Switching Application z Battery protection

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Datasheet Details

Part number HYG260P03LR1S
Manufacturer HUAYI
File Size 973.81 KB
Description P-Channel Enhancement Mode MOSFET
Datasheet download datasheet HYG260P03LR1S Datasheet

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Full PDF Text Transcription

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HYG260P03LR1S P-Channel Enhancement Mode MOSFET FeatureDescription z -30V/-8A RDS(ON) = 21.6mΩ(typ.) @VGS =- 10V RDS(ON) = 42 mΩ(typ.) @VGS = -4.5V z 100% Avalanche Tested z Reliable and Rugged z Halogen Free and Green Devices Available (RoHS Compliant) Pin Description SOP-8L Applications z Power Management for DC/DC z Switching Application z Battery protection Ordering and Marking Information S G260P03 XXXYWXXXXX P-Channel MOSFET Package Code S: SOP-8L Date Code XXXYWXXXXX Assembly Material G:Halogen Free Note:HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plateTermiNationfinish;which are fully compliant with RoHS.
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