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HYG067N07NQ1D - N-Channel Enhancement Mode MOSFET

Description

G DS G DS S GD TO-252-2L TO-251-3L TO-251-3S Applications Portable equipment and battery powered systems DC-DC Converters Switching application Ordering and Marking Information N-Channel MOSFET D G067N07 XYMXXXXXX U G067N07 XYMXXXXXX V G067N07 XYMXXXXXX Package Code D:

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Datasheet Details

Part number HYG067N07NQ1D
Manufacturer HUAYI
File Size 1.33 MB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet HYG067N07NQ1D Datasheet

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Full PDF Text Transcription

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HYG067N07NQ1D/U/V N-Channel Enhancement Mode MOSFET Feature  68V/70A RDS(ON)= 6.8mΩ(typ.)@VGS = 10V  100% Avalanche Tested  Reliable and Rugged  Halogen Free and Green Devices Available (RoHS Compliant) Pin Description G DS G DS S GD TO-252-2L TO-251-3L TO-251-3S Applications  Portable equipment and battery powered systems  DC-DC Converters  Switching application Ordering and Marking Information N-Channel MOSFET D G067N07 XYMXXXXXX U G067N07 XYMXXXXXX V G067N07 XYMXXXXXX Package Code D: TO-252-2L V: TO-251-3S Date Code XYMXXXXXX U: TO-251-3L Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plateTermiNation finish; which are fully compliant with RoHS.
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