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HYG064N08NA1B - N-Channel Enhancement Mode MOSFET

Download the HYG064N08NA1B datasheet PDF. This datasheet also covers the HYG064N08NA1P variant, as both devices belong to the same n-channel enhancement mode mosfet family and are provided as variant models within a single manufacturer datasheet.

Description

DS G TO-220FB-3L G DS TO-263-2L Applications Switching application Power management for inverter system N-Channel MOSFET Ordering and Marking Information P G064N08 XYMXXXXXX B G064N08 XYMXXXXXX Package Code P :TO-220FB-3L Date Code XYMXXXXXX B:TO-263-2L Note: HUAYI lead-free pr

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Note: The manufacturer provides a single datasheet file (HYG064N08NA1P-HUAYI.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number HYG064N08NA1B
Manufacturer HUAYI
File Size 858.10 KB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet HYG064N08NA1B Datasheet

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Other Datasheets by HUAYI

Part Number Description
HYG064N08NA1P N-Channel Enhancement Mode MOSFET
HYG060N08NS1B N-Channel Enhancement Mode MOSFET
HYG060N08NS1D N-Channel Enhancement Mode MOSFET
HYG060N08NS1P N-Channel Enhancement Mode MOSFET
HYG060N08NS1U N-Channel Enhancement Mode MOSFET

Full PDF Text Transcription

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HYG064N08NA1P/B Feature  80V/120A RDS(ON)= 6.4mΩ(typ.)@VGS = 10V  100% Avalanche Tested  Reliable and Rugged  Lead-Free and Green DevicesAvailable (RoHS Compliant) N-Channel Enhancement Mode MOSFET Pin Description DS G TO-220FB-3L G DS TO-263-2L Applications  Switching application  Power management for inverter system N-Channel MOSFET Ordering and Marking Information P G064N08 XYMXXXXXX B G064N08 XYMXXXXXX Package Code P :TO-220FB-3L Date Code XYMXXXXXX B:TO-263-2L Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate TermiNation finish;which are fully compliant with RoHS. HUAYI lead-free products meet or exceed the lead-Free requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature.
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