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HYG050N10NS1P - N-Channel Enhancement Mode MOSFET

General Description

Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plateTermiNation finish; which are fully compliant with RoHS.

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Datasheet Details

Part number HYG050N10NS1P
Manufacturer HUAYI
File Size 1.31 MB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet HYG050N10NS1P Datasheet

Full PDF Text Transcription (Reference)

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HYG050N10NS1P Feature  100V/135A RDS(ON)=4.4mΩ (typ.) @ VGS = 10V  100% Avalanche Tested  Reliable and Rugged  Lead-Free and Green Devices Available (RoHS Compliant) Applications  Power Switching application  Motor Control N-Channel Enhancement Mode MOSFET Pin Description TO-220FB-3L Ordering and Marking Information P G050N10 XYMXXXXXX N-Channel MOSFET Package Code P :TO-220FB-3L Date Code XYMXXXXXX Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plateTermiNation finish; which are fully compliant with RoHS. HUAYI lead-free products meet or exceed the lead-Free requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature.