• Part: HYG030N03LQ1D
  • Description: N-Channel Enhancement Mode MOSFET
  • Category: MOSFET
  • Manufacturer: HUAYI
  • Size: 772.65 KB
Download HYG030N03LQ1D Datasheet PDF
HUAYI
HYG030N03LQ1D
Feature - 30V/100A RDS(ON)= 2.5 mΩ(typ.) @VGS = 10V RDS(ON)= 3.5 mΩ(typ.) @VGS = 4.5V - 100% Avalanche Tested - Reliable and Rugged - Halogen- Free Devices Available Pin Description DS G Applications - Battery Protection - Motor drives Single N-Channel MOSFET Ordering and Marking Information G030N03 XYMXXXXXX Package Code D: TO-252-2L Date Code XYMXXXXXX Note: HUAYI lead-free products contain molding pounds/die attach materials and 100% matte tin plate Termi Nation finish;which are fully pliant with Ro HS. HUAYI lead-free products meet or exceed the lead-Free requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature. HUAYI defines “Green” to mean lead-free (Ro HS pliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight). HUAYI reserves the right to make changes, corrections, enhancements, modifications, and improvements to this pr -oduct and/or to...