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HYG027N04LR1D - N-Channel Enhancement Mode MOSFET

Description

G DS Applications Load Switch Lithium battery protect board Single N-Channel MOSFET Ordering and Marking Information D G027N04 XYMXXXXXX Package Code D: TO-252-2L Date Code XYMXXXXXX Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin pla

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Datasheet Details

Part number HYG027N04LR1D
Manufacturer HUAYI
File Size 881.94 KB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet HYG027N04LR1D Datasheet

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Full PDF Text Transcription

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HYG027N04LR1D Single N-Channel Enhancement Mode MOSFET Feature  40V/95A RDS(ON)= 2.6 mΩ (typ.) @VGS = 10V RDS(ON)= 3.1 mΩ (typ.) @VGS = 4.5V  100% Avalanche Tested  Reliable and Rugged  Halogen- Free Devices Available (RoHS Compliant) Pin Description G DS Applications  Load Switch  Lithium battery protect board Single N-Channel MOSFET Ordering and Marking Information D G027N04 XYMXXXXXX Package Code D: TO-252-2L Date Code XYMXXXXXX Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate TermiNation finish;which are fully compliant with RoHS. HUAYI lead-free products meet or exceed the lead-Free requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature.
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