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HYG024N03LR1D - N-Channel Enhancement Mode MOSFET

Description

S D G Applications Battery Protection DC-DC Converters Single N-Channel MOSFET Ordering and Marking Information D G024N03 XYMXXXXXX Package Code D: TO-252-2L Date Code XYMXXXXXX Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate T

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Datasheet Details

Part number HYG024N03LR1D
Manufacturer HUAYI
File Size 888.60 KB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet HYG024N03LR1D Datasheet

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Full PDF Text Transcription

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HYG024N03LR1D Single N-Channel Enhancement Mode MOSFET Feature  30V/100A RDS(ON)= 2.3 mΩ(typ.) @VGS = 10V RDS(ON)= 3.0 mΩ(typ.) @VGS = 4.5V  100% Avalanche Tested  Reliable and Rugged  Halogen- Free Devices Available Pin Description S D G Applications  Battery Protection  DC-DC Converters Single N-Channel MOSFET Ordering and Marking Information D G024N03 XYMXXXXXX Package Code D: TO-252-2L Date Code XYMXXXXXX Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate TermiNation finish;which are fully compliant with RoHS. HUAYI lead-free products meet or exceed the lead-Free requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature.
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