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HYG022N03LQ1D - N-Channel MOSFET

Description

GDS GDS GDS TO-252-2L TO-251-3L TO-251-3S Applications z Switching Application z Power Management for DC/DC z Battery Protection Ordering and Marking Information N-Channel MOSFET D G022N03 XYMXXXXXX U G022N03 XYMXXXXXX V G022N03 XYMXXXXXX Package Code D: TO-252-2L U: TO-251-3L V:TO-251-3

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Datasheet Details

Part number HYG022N03LQ1D
Manufacturer HUAYI
File Size 933.22 KB
Description N-Channel MOSFET
Datasheet download datasheet HYG022N03LQ1D Datasheet

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Full PDF Text Transcription

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HYG022N03LQ1D/U/V N-Channel Enhancement Mode MOSFET Feature z 30V/115A RDS(ON)= 2.0mΩ(typ.) @VGS = 10V RDS(ON)= 2.6mΩ(typ.) @VGS = 4.5V z 100% Avalanche Tested z Reliable and Rugged z Halogen Free and Green Devices Available (RoHS Compliant) Pin Description GDS GDS GDS TO-252-2L TO-251-3L TO-251-3S Applications z Switching Application z Power Management for DC/DC z Battery Protection Ordering and Marking Information N-Channel MOSFET D G022N03 XYMXXXXXX U G022N03 XYMXXXXXX V G022N03 XYMXXXXXX Package Code D: TO-252-2L U: TO-251-3L V:TO-251-3S Date Code XYMXXXXXX Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plateTermiNation finish; which are fully compliant with RoHS.
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