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HYG019N04NR1C2 - N-Channel Enhancement Mode MOSFET

Description

DDDD DDDD SSSG GSSS PDFN8L(5x6) Applications Load Switch Battery Protection Ordering and Marking Information Single N-Channel MOSFET C2 G019N04 XYMXXXXXX Package Code C2: PDFN8L(5x6) Date Code XYMXXXXXX Note: HUAYI lead-free products contain molding compounds/die attach materi

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Datasheet Details

Part number HYG019N04NR1C2
Manufacturer HUAYI
File Size 1.30 MB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet HYG019N04NR1C2 Datasheet

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Full PDF Text Transcription

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HYG019N04NR1C2 Single N-Channel Enhancement Mode MOSFET Feature  40V/127A RDS(ON)= 2.0 mΩ(typ.) @VGS = 10V  100% Avalanche Tested  Reliable and Rugged  Halogen- Free Devices Available Pin Description DDDD DDDD SSSG GSSS PDFN8L(5x6) Applications  Load Switch  Battery Protection Ordering and Marking Information Single N-Channel MOSFET C2 G019N04 XYMXXXXXX Package Code C2: PDFN8L(5x6) Date Code XYMXXXXXX Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate TermiNation finish;which are fully compliant with RoHS. HUAYI lead-free products meet or exceed the lead-Free requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature.
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