Datasheet4U Logo Datasheet4U.com

HYG009N04LS1C2 - Single N-Channel Enhancement Mode MOSFET

Description

40V/200A RDS(ON)= 0.75mΩ (typ.) @VGS = 10V RDS(ON)= 1.05mΩ (typ.) @VGS = 4.5V 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices Available Pin Description DDDD DDDD SSSG GSSS Pin1 PDFN5 6-8L Applications Switching Application Power Manageme

📥 Download Datasheet

Datasheet preview – HYG009N04LS1C2

Datasheet Details

Part number HYG009N04LS1C2
Manufacturer HUAYI
File Size 690.56 KB
Description Single N-Channel Enhancement Mode MOSFET
Datasheet download datasheet HYG009N04LS1C2 Datasheet
Additional preview pages of the HYG009N04LS1C2 datasheet.

📁 Similar Datasheet

Other Datasheets by HUAYI

Full PDF Text Transcription

Click to expand full text
HYG009N04LS1C2 Single N-Channel Enhancement Mode MOSFET Feature Description  40V/200A RDS(ON)= 0.75mΩ (typ.) @VGS = 10V RDS(ON)= 1.05mΩ (typ.) @VGS = 4.5V  100% Avalanche Tested  Reliable and Rugged  Halogen- Free Devices Available Pin Description DDDD DDDD SSSG GSSS Pin1 PDFN5*6-8L Applications  Switching Application  Power Management for DC/DC  Battery Protection Single N-Channel MOSFET Ordering and Marking Information C2 G009N04 XYMXXXXXX Package Code C2: PDFN5*6-8L Date Code XYMXXXXXX Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate TermiNation finish;which are fully compliant with RoHS.
Published: |