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HYG007N03LS1C2 - Single N-Channel Enhancement Mode MOSFET

Description

30V/220A RDS(ON)= 0.63mΩ (typ.) @VGS = 10V RDS(ON)= 0.96 mΩ (typ.) @VGS = 4.5V 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices Available Pin Description DDDD DDDD SSSG GSSS Pin1 PDFN5 6-8L Applications Switching Application Power Managem

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Datasheet Details

Part number HYG007N03LS1C2
Manufacturer HUAYI
File Size 632.14 KB
Description Single N-Channel Enhancement Mode MOSFET
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HYG007N03LS1C2 Single N-Channel Enhancement Mode MOSFET Feature Description  30V/220A RDS(ON)= 0.63mΩ (typ.) @VGS = 10V RDS(ON)= 0.96 mΩ (typ.) @VGS = 4.5V  100% Avalanche Tested  Reliable and Rugged  Halogen- Free Devices Available Pin Description DDDD DDDD SSSG GSSS Pin1 PDFN5*6-8L Applications  Switching Application  Power Management for DC/DC  Battery Protection Single N-Channel MOSFET Ordering and Marking Information C2 G007N03 XYMXXXXXX Package Code C2: PDFN5*6-8L Date Code XYMXXXXXX Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate TermiNation finish;which are fully compliant with RoHS.
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