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HY2N7002E - N-Channel Enhancement Mode MOSFET

Description

Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plateTermiNation finish; which are fully compliant with RoHS.

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Datasheet Details

Part number HY2N7002E
Manufacturer HUAYI
File Size 1.35 MB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet HY2N7002E Datasheet

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HY2N7002E N-Channel Enhancement Mode MOSFET Feature  60V/200mA RDS(ON)= 2.4Ω(typ.) @ VGS = 10V RDS(ON)= 3.0Ω(typ.) @ VGS = 5V RDS(ON)= 3.1Ω(typ.) @ VGS = 4.5V  Avalanche Rated  Lead Free Devices Available  Reliable and Rugged  ESD Protected  HBM：＞1KV Applications  Networking  Switching application  Hand-held Instruments Ordering and Marking Information Pin Description D S G SOT-23-3L N-Channel MOSFET Product type XX Date Code WW Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plateTermiNation finish; which are fully compliant with RoHS. HUAYI lead-free products meet or exceed the lead-Free requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature.
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