• Part: HY030N06C2
  • Description: N-Channel Enhancement Mode MOSFET
  • Category: MOSFET
  • Manufacturer: HUAYI
  • Size: 625.97 KB
Download HY030N06C2 Datasheet PDF
HUAYI
HY030N06C2
Feature - 65V/100A RDS(ON)= 2.4 mΩ(typ.)@VGS = 10V RDS(ON)= 3.7 mΩ(typ.)@VGS = 4.5V - 100% Avalanche Tested - Reliable and Rugged - Halogen- Free Devices Available Pin Description DDDD DDDD SSSG Pin1 GS S S PPAK5- 6-8L Applications - Hard switched and high frequency circuits - Power switching application - Uninterruptible power supply Single N-Channel MOSFET Ordering and Marking Information C2 HY030N06 YYXXXLWW G Package Code C2: PPAK5- 6-8L Date Code YYXXXLWW G Assembly Material G: Halogen- Free Note: HUAYI lead-free products contain molding pounds/die attach materials and 100% matte tin plate Termi Nation finish;which are fully pliant with Ro HS. HUAYI lead-free products meet or exceed the lead-Free requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature. HUAYI defines “Green” to mean lead-free (Ro HS pliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed...