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HY030N06C2 - N-Channel Enhancement Mode MOSFET

Description

DDDD DDDD SSSG Pin1 GS S S PPAK5 6-8L Applications Hard switched and high frequency circuits Power switching application Uninterruptible power supply Single N-Channel MOSFET Ordering and Marking Information C2 HY030N06 YYXXXLWW G Package Code C2: PPAK5 6-8L Date C

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Datasheet Details

Part number HY030N06C2
Manufacturer HUAYI
File Size 625.97 KB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet HY030N06C2 Datasheet

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Full PDF Text Transcription

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HY030N06C2 Single N-Channel Enhancement Mode MOSFET Feature  65V/100A RDS(ON)= 2.4 mΩ(typ.)@VGS = 10V RDS(ON)= 3.7 mΩ(typ.)@VGS = 4.5V  100% Avalanche Tested  Reliable and Rugged  Halogen- Free Devices Available Pin Description DDDD DDDD SSSG Pin1 GS S S PPAK5*6-8L Applications  Hard switched and high frequency circuits  Power switching application  Uninterruptible power supply Single N-Channel MOSFET Ordering and Marking Information C2 HY030N06 YYXXXLWW G Package Code C2: PPAK5*6-8L Date Code YYXXXLWW G Assembly Material G: Halogen- Free Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate TermiNation finish;which are fully compliant with RoHS.
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