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HGH25N120A - N-Channel Enhancement Mode Field Effect Transistor

Description

Collector to Emitter Voltage Gate to Emitter Voltage Collector Current（TC = 25℃） Collector Current（TC = 100℃） Ratings 1200 ±30 50 25 Units V V A A ICM (1) Pulsed Collector Current 80 A IF Diode continuous Forward current （TC = 100℃） 15 A Maximum Power Dissipation（TC = PD 25℃） Maximum Powe

Features

  • s TO-3P.
  • Low saturation voltage, Vce(on)(typ)=2.1V@Vge=15V.
  • High input impedance.
  • Field stop trench technology offer superior conduction and switching performances,.
  • High speed switching.
  • Absolute Maximum Ratings 1―Gate，G 2―Collector，C 3―Emitter，E Symbol VCES VGES IC.

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Datasheet Details

Part number HGH25N120A
Manufacturer HUASHAN ELECTRONIC
File Size 0.96 MB
Description N-Channel Enhancement Mode Field Effect Transistor
Datasheet download datasheet HGH25N120A Datasheet

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HGH20N120A N-Channel Enhancement Mode Field Effect Transistor

Full PDF Text Transcription

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N-Channel Enhancement Insulated Gate Bipolar Transistor HGH25N120A █ Applications • Induction heating and Microwave oven • Soft switching applications █ Features TO-3P • Low saturation voltage, Vce(on)(typ)=2.
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