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HS70N06PA - N-CHANNEL MOSFET

Description

The HS70N06 is three-terminal silicon device with current conduction capability of about 70A, fast switching speed.

Low on-state resistance, breakdown voltage rating of 60V, and max threshold voltages of 4 volt.

2.

Features

  • RDS(ON)=15mΩ@VGS=10V.
  • Ultra low gate charge (typical 90nC).
  • Low reverse transfer capacitance.
  • Fast switching capability.
  • 100％ avalanche energy specified.
  • Improved dv/dt capability 3. Pin configuration TO-220 Pin 1 2 3 1 of 6 Function Gate Drain Source 0 Amps, 60 Volts N-.

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Datasheet Details

Part number HS70N06PA
Manufacturer HS
File Size 567.61 KB
Description N-CHANNEL MOSFET
Datasheet download datasheet HS70N06PA Datasheet

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0 Amps, 60 Volts N-CHANNEL MOSFET HS70N06PA 1.Description The HS70N06 is three-terminal silicon device with current conduction capability of about 70A, fast switching speed. Low on-state resistance, breakdown voltage rating of 60V, and max threshold voltages of 4 volt. It is mainly suitable electronic ballast, and low power switching 2. Features „ RDS(ON)=15mΩ@VGS=10V. „ Ultra low gate charge (typical 90nC) „ Low reverse transfer capacitance „ Fast switching capability „ 100％ avalanche energy specified „ Improved dv/dt capability 3. Pin configuration TO-220 Pin 1 2 3 1 of 6 Function Gate Drain Source 0 Amps, 60 Volts N-CHANNEL MOSFET HS70N06PA 4.
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