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High Performance Isolated Collector Silicon Bipolar Transistor
Technical Data
HBFP-0420
Features
• Ideal for High Gain, Low Noise Applications
• Transition Frequency fT = 25 GHz
• Typical Performance at 1.8 GHz Associated Gain of 17 dB and Noise Figure of 1.1 dB at 2 V and 5 mA
P1dB of 12 dBm at 2 V and 20 mA
• Can be Used Without Impedance Matching
Applications
• LNA, Oscillator, Driver Amplifier, Buffer Amplifier, and Down Converter for Cellular and PCS Handsets and Cordless Telephones
• Oscillator for TV Delivery and TVRO Systems up to 10 GHz
Surface Mount Plastic Package/ SOT-343 (SC-70) Outline 4T
Description
Hewlett Packard’s HBFP-0420 is a high performance isolated collector silicon bipolar junction transistor housed in a 4-lead SC-70 (SOT-343) surface mount plastic package.