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Plastic-Encapsulate Mosfets
IRLML6401
l Ultra Low On-Resistance l P-Channel MOSFET l SOT-23 Footprint l Low Profile (<1.1mm) l Available in Tape and Reel l Fast Switching l 1.8V Gate Rated l Lead-Free l Halogen-Free l Marking: 1F
* 6
Absolute Maximum Ratings
Parameter
VDS
ID @ TA = 25°C ID @ TA= 70°C IDM PD @TA = 25°C PD @TA = 70°C
Drain- Source Voltage
Continuous Drain Current, VGS @ -4.5V Continuous Drain Current, VGS @ -4.5V Pulsed Drain Current Power Dissipation
Power Dissipation
Linear Derating Factor
EAS VGS TJ, TSTG
Single Pulse Avalanche Energy Gate-to-Source Voltage Junction and Storage Temperature Range
Thermal Resistance
RθJA
Parameter Maximum Junction-to-Ambient
Power MOSFET
VDSS = -12V
'
RDS(on) = 0.05Ω
Max. -12 -4.3 -3.4 -34 1.3 0.8 0.01 33 ± 8.
IRLML6401 Datasheet
