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HYG350P13NA1B - P-Channel Enhancement Mode MOSFET

Description

TO-263-2L Applications Power Tool Application Networking DC-DC Power System Ordering and Marking Information Single P-Channel MOSFET B G350P13 XYMXXXXXX Package Code B: TO-263-2L Date Code XYMXXXXXX Note: HUAYI lead-free products contain molding compounds/die attach materials and 1

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Datasheet Details

Part number HYG350P13NA1B
Manufacturer HOOYI
File Size 1.23 MB
Description P-Channel Enhancement Mode MOSFET
Datasheet download datasheet HYG350P13NA1B Datasheet

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Full PDF Text Transcription

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HYG350P13NA1B Single P-Channel Enhancement Mode MOSFET Feature  -125V/-39A RDS(ON)=35mΩ (typ.) @ VGS = -10V  100% Avalanche Tested  Reliable and Rugged  Lead- Free and Green Devices Available (RoHS Compliant) Pin Description TO-263-2L Applications  Power Tool Application  Networking DC-DC Power System Ordering and Marking Information Single P-Channel MOSFET B G350P13 XYMXXXXXX Package Code B: TO-263-2L Date Code XYMXXXXXX Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plateTermiNation finish; which are fully compliant with RoHS. HUAYI lead-free products meet or exceed the lead-Free requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature.
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