• Part: HYG350P13NA1B
  • Description: P-Channel Enhancement Mode MOSFET
  • Category: MOSFET
  • Manufacturer: HOOYI
  • Size: 1.23 MB
Download HYG350P13NA1B Datasheet PDF
HOOYI
HYG350P13NA1B
Feature - -125V/-39A RDS(ON)=35mΩ (typ.) @ VGS = -10V - 100% Avalanche Tested - Reliable and Rugged - Lead- Free and Green Devices Available (Ro HS pliant) Pin Description TO-263-2L Applications - Power Tool Application - Networking DC-DC Power System Ordering and Marking Information Single P-Channel MOSFET G350P13 XYMXXXXXX Package Code B: TO-263-2L Date Code XYMXXXXXX Note: HUAYI lead-free products contain molding pounds/die attach materials and 100% matte tin plate Termi Nation finish; which are fully pliant with Ro HS. HUAYI lead-free products meet or exceed the lead-Free requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature. HUAYI defines “Green” to mean lead-free (Ro HS pliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight). HUAYI reserves the right to make changes, corrections, enhancements, modifications, and improvements to this pr...