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HYG210P06LQ1U - P-Channel Enhancement Mode MOSFET

Download the HYG210P06LQ1U datasheet PDF. This datasheet also covers the HYG210P06LQ1D variant, as both devices belong to the same p-channel enhancement mode mosfet family and are provided as variant models within a single manufacturer datasheet.

Description

TO-252-2L TO-251-3L TO-251-3S Applications

Power Management in DC/DC converter.

Load switching.

Motor control.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (HYG210P06LQ1D-HOOYI.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number HYG210P06LQ1U
Manufacturer HOOYI
File Size 1.10 MB
Description P-Channel Enhancement Mode MOSFET
Datasheet download datasheet HYG210P06LQ1U Datasheet

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Other Datasheets by HOOYI

Part Number Description
HYG210P06LQ1D P-Channel Enhancement Mode MOSFET
HYG210P06LQ1V P-Channel Enhancement Mode MOSFET
HYG200N12NS1P N-Channel Enhancement Mode MOSFET
HYG200P10LR1B P-Channel Enhancement Mode MOSFET
HYG200P10LR1P P-Channel Enhancement Mode MOSFET

Full PDF Text Transcription

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HYG210P06LQ1 D/U/V P-Channel Enhancement Mode MOSFET Feature  -60V/-40A RDS(ON)= 19mΩ(typ.)@VGS = -10V RDS(ON)= 25mΩ(typ.)@VGS = -4.5V  100% avalanche tested  Reliable and Rugged  Halogen Free and Green Devices Available (RoHS Compliant) Pin Description TO-252-2L TO-251-3L TO-251-3S Applications  Power Management in DC/DC converter.  Load switching.  Motor control. P-Channel MOSFET Ordering and Marking Information D U V G210P06L G210P06L G210P06L XXXYWXXXXX XXXYWXXXXX XXXYWXXXXX Package Code D: TO-252-2L U: TO-251-3L V:TO-251-3S Date Code XXXYWXXXXX Note: HOOYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate Termination finish; which are fully compliant with RoHS.
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