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HYG200N12NS1P - N-Channel Enhancement Mode MOSFET

Description

Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plateTermiNation finish; which are fully compliant with RoHS.

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Datasheet Details

Part number HYG200N12NS1P
Manufacturer HOOYI
File Size 1.43 MB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet HYG200N12NS1P Datasheet

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Full PDF Text Transcription

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HYG200N12NS1P N-Channel Enhancement Mode MOSFET Feature  120V/60A RDS(ON)=15mΩ (typ.) @ VGS = 10V  100% Avalanche Tested  Reliable and Rugged  Lead-Free and Green Devices Available (RoHS Compliant) Applications  Power Switching application  High Frequency Synchronous Buck Converter Pin Description TO-220FB-3L Ordering and Marking Information P G200N12 XYMXXXXXX N-Channel MOSFET Package Code P :TO-220FB-3L Date Code XYMXXXXXX Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plateTermiNation finish; which are fully compliant with RoHS. HUAYI lead-free products meet or exceed the lead-Free requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature.
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